document number: 94366 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-apr-08 1 inverter grade thyristors (hockey puk version), 330 a st173cpbf series vishay high power products features ? metal case with ceramic insulator ? all diffused design ? center amplifying gate ? guaranteed high dv/dt ? international standard case to-200ab (a-puk) ? guaranteed high di/dt ? high surge current capability ? low thermal impedance ? high speed performance typical applications ?inverters ? choppers ? induction heating ? all types of force-commutated converters electrical specifications product summary i t(av) 330 a to-200ab (a-puk) rohs compliant major ratings and characteristics parameter test conditions values units i t(av) 330 a t hs 55 c i t(rms) 610 a t hs 25 c i tsm 50 hz 4680 a 60 hz 4900 i 2 t 50 hz 110 ka 2 s 60 hz 100 v drm /v rrm 1000 to 1200 v t q range 15 to 30 s t j - 40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma st173c..c 10 1000 1100 40 12 1200 1300
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94366 2 revision: 29-apr-08 st173cpbf series vishay high power products inverter grade thyristors (hockey puk version), 330 a current carrying capability frequency units 50 hz 760 660 1200 1030 5570 4920 a 400 hz 730 590 1260 1080 2800 2460 1000 hz 600 490 1200 1030 1620 1390 2500 hz 350 270 850 720 800 680 recovery voltage v r 50 50 50 v voltage before turn-on v d v drm v drm v drm rise of on-state current di/dt 50 - - a/s heatsink temperature 40 55 40 55 40 55 c equivalent values for rc circuit 47/0.22 47/0.22 47/0.22 / f on-state conduction parameter symbol test conditions values units maximum average on-state current at heatsink temperature i t(av) 180 conduction, half sine wave double side (single side) cooled 330 (120) a 55 (85) c maximum rms on-state current i t(rms) dc at 25 c heatsink tem perature double side cooled 610 a maximum peak, one half cycle, non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 4680 t = 8.3 ms 4900 t = 10 ms 100 % v rrm reapplied 3940 t = 8.3 ms 4120 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 110 ka 2 s t = 8.3 ms 100 t = 10 ms 100 % v rrm reapplied 77 t = 8.3 ms 71 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 1100 ka 2 s maximum peak on-state voltage v tm i tm = 600 a, t j = t j maximum, t p = 10 ms sine wave pulse 2.07 v low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 1.55 high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 1.61 low level value of forward slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.87 m high level value of fo rward slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.77 maximum holding current i h t j = 25 c, i t > 30 a 600 ma typical latching current i l t j = 25 c, v a = 12 v, r a = 6 , i g = 1 a 1000 switching parameter symbol test conditions values units maximum non-repetitive rate of rise of turned on current di/dt t j = t j maximum, v drm = rated v drm , i tm = 2 x di/dt 1000 a/s typical delay time t d t j = 25 c, v dm = rated v drm , i tm = 50 a dc, t p = 1 s resistive load, gate pulse: 10 v, 5 source 1.1 s maximum turn-off time minimum t q t j = t j maximum, i tm = 300 a, commutating di/dt = 20 a/s v r = 50 v, t p = 500 s, dv/dt: see table in device code 15 maximum 30 180 el i tm 180 el i tm 100 s i tm
document number: 94366 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-apr-08 3 st173cpbf series inverter grade thyristors (hockey puk version), 330 a vishay high power products note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at diffe rent conduction angles than dc blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum, linear to 80 % v drm , higher value available on request 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 40 ma triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, f = 50 hz, d% = 50 60 w maximum average gate power p g(av) 10 maximum peak positive gate current i gm t j = t j maximum, t p 5 ms 10 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5 maximum dc gate current required to trigger i gt t j = 25 c, v a = 12 v, r a = 6 200 ma maximum dc gate voltage required to trigger v gt 3v maximum dc gate current not to trigger i gd t j = t j maximum, rated v drm applied 20 ma maximum dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistanc e, junction to heatsink r thj-hs dc operation single side cooled 0.17 k/w dc operation double side cooled 0.08 maximum thermal resistance, case to heatsink r thc-hs dc operation single side cooled 0.033 dc operation double side cooled 0.017 mounting force, 10 % 4900 (500) n (kg) approximate weight 50 g case style see dimensions - link at the end of datasheet to-200ab (a-puk) r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.015 0.016 0.011 0.011 t j = t j maximum k/w 120 0.018 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94366 4 revision: 29-apr-08 st173cpbf series vishay high power products inverter grade thyristors (hockey puk version), 330 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5 - on-state power loss characteristics fig. 6 - on-state power loss characteristics 0 200 maximum allowable heatsink temperature (c) average on-state current (a) 40 80 240 120 160 40 50 60 70 80 90 100 110 120 130 st173c..c series (single side cooled) r thj-hs (dc) = 0.17 k/w ? conduction angle 60 30 90 120 180 0 250 300 350 average on-state current (a) 50 150 100 200 maximum allowable heatsink temperature (c) 20 30 40 50 60 70 80 90 100 110 120 130 st173c..c series (single side cooled) r thj-hs (dc) = 0.17 k/w ? conduction period 30 60 90 120 180 dc 0 250 300 350 400 average on-state current (a) 50 150 100 200 maximum allowable heatsink temperature (c) 30 40 50 60 70 80 90 100 110 120 130 30 60 90 120 180 st173c..c series (double side cooled) r thj-hs (dc) = 0.08 k/w ? conduction angle average on-state current (a) maximum allowable heatsink temperature (c) 0 500 600 700 100 300 200 400 20 30 40 50 60 70 80 90 100 110 120 130 st173c..c series (double side cooled) r thj-hs (dc) = 0.08 k/w ? conduction period dc 30 60 90 120 180 average on-state current (a) maximum average on-state power loss (w) 0 100 200 300 400 500 600 700 800 900 1000 rms limit 0 250 300 350 400 450 50 150 100 200 180 120 90 60 30 ? conduction angle st173c..c series t j = 125 c average on-state current (a) maximum average on-state power loss (w) 0 200 400 600 800 1000 1200 1400 0 300 400 500 600 700 100 200 dc 180 120 90 60 30 rms limit st173c..c series t j = 125 c ? conduction period
document number: 94366 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-apr-08 5 st173cpbf series inverter grade thyristors (hockey puk version), 330 a vishay high power products fig. 7 - maximum non- repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled fig. 9 - on-state voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics fig. 11 - reverse recover ed charge characteristics fig. 12 - reverse recovered current characteristics 1 10 100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) 2000 2500 3000 3500 4000 4500 initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s at any rated load condition and with rated v rrm applied following surge. st173c..c series 0.01 0.1 1 pulse train duration (s) peak half sine wave on-state current (a) 1500 2000 2500 3000 3500 4000 4500 5000 no voltage reapplied rated v rrm reapplied maximum non-repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t j = 125 c st173c..c series 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1000 10 000 instantaneous on-state current (a) instantaneous on-state voltage (v) st173c..c series t j = 25 c t j = 125 c 0.01 0.1 1 10 0.001 1 square wave pulse duration (s) transient thermal impedance z thj-hs (k/w) 0.001 0.01 0.1 st173c..c series steady state value r thj-hs = 0.17 k/w (single side cooled) r thj-hs = 0.08 k/w (double side cooled) (dc operation) 20 0 40 60 80 100 di/dt - rate of fall of on-state current (a/s) q rr - maximum reverse recovery charge (c) 0 50 100 150 200 250 st173c..c series t j = 125 c i tm = 500 a i tm = 300 a i tm = 200 a i tm = 100 a i tm = 50 a 20 0 20 0 40 60 80 100 40 60 80 100 120 140 160 di/dt - rate of fall of forward current (a/s) i rr - maximum reverse recovery current (a) st173c..c series t j = 125 c i tm = 500 a i tm = 300 a i tm = 200 a i tm = 100 a i tm = 50 a
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94366 6 revision: 29-apr-08 st173cpbf series vishay high power products inverter grade thyristors (hockey puk version), 330 a fig. 13 - frequency characteristics fig. 14 - frequency characteristics fig. 15 - frequency characteristics 100 10 100 1000 10 000 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm t p st173c..c series sinusoidal pulse t c = 40 c 50 hz 100 200 500 400 1000 1500 2500 3000 5000 100 10 100 1000 10 000 1000 10 000 pulse basewidth (s) peak on-state current (a) t p st173c..c series sinusoidal pulse t c = 55 c 50 hz 100 500 400 1000 1500 2500 3000 5000 snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 200 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm st173c..c series trapezoidal pulse t c = 40 c di/dt = 50 a/s t p 5000 2500 1500 1000 400 200 100 50 hz 3000 500 2000 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm st173c..c series trapezoidal pulse t c = 55 c di/dt = 50 a/s t p 5000 2500 1500 1000 400 200 100 50 hz 3000 500 2000 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) st173c..c series trapezoidal pulse t c = 40 c di/dt = 100 a/s t p 50 hz 100 200 400 500 1000 1500 2500 3000 5000 10 000 10 snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm st173c..c series trapezoidal pulse t c = 55 c di/dt = 100 a/s t p 50 hz 100 200 400 500 1000 1500 2500 3000 5000 10 000 10
document number: 94366 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-apr-08 7 st173cpbf series inverter grade thyristors (hockey puk version), 330 a vishay high power products fig. 16 - maximum on-state ener gy power loss characteristics fig. 17 - gate characteristics pulse basewidth (s) peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 t p st173c..c series sinusoidal pulse 100 000 0.1 0.2 0.5 2 3 1 5 10 20 joules per pulse 0.3 pulse basewidth (s) peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 100 000 0.1 0.2 0.5 2 3 1 5 10 20 joules per pulse t p st173c..c series rectangular pulse di/dt = 50 a/s 0.3 0.1 1 10 100 0.001 instantaneous gate current (a) instantaneous gate voltage (v) 0.01 0.1 1 10 100 (b) v gd i gd (1) (2) (3) device: st173c..c series (4) frequency limited by p g(av) (1) p gm = 10 w, t p = 20 ms (2) p gm = 20 w, t p = 10 ms (3) p gm = 40 w, t p = 5 ms (4) p gm = 60 w, t p = 3.3 ms rectangular gate pulse a) recommended load line for rated di/dt: 20 v, 10 ; t r 1 s b) recommended load line for 30 % rated di/dt: 10 v, 10 t r 1 s (a) t j = 40 c t j = 25 c t j = 125 c
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94366 8 revision: 29-apr-08 st173cpbf series vishay high power products inverter grade thyristors (hockey puk version), 330 a ordering information table 3 = fast-on terminals (gate and aux. cathode soldered leads) 1 - thyristor 2 - essential part number 3 - 3 = fast turn-off 4 - c = ceramic puk 5 - voltage code x 100 = v rrm (see voltage ratings table) 10 6 - c = puk case to-200ab (a-puk) 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet terminals (gate and aux. cathode unsoldered leads) 1 = fast-on terminals (gate and aux. cathode unsoldered leads) 2 = eyelet terminals (gate and aux. cathode soldered leads) 11 - critical dv/dt: none = 500 v/s (standard value) l = 1000 v/s (special selection) - p = lead (pb)-free * standard part number. all other types available only on request. t q (s) dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 15 cl -- -- -- -- 18 cp dp ep fp * -- 20 ck dk ek fk * hk 25 cj dj ej fj hj 30 -- dh eh fh hh device code 5 1 3 24 6 7 8 9 10 11 st 17 3 c 12 c h k 1 - p links to related documents dimensions http://www.vishay.com/doc?95074
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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